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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :Preliminary Data Issued Date : 2000.10.01 Revised Date : 2000.10.01 Page No. : 1/3 HAD826SP NPN EPITAXIAL PLANAR TRANSISTOR Description The HAD826SP is designed for general purpose amplifier and high speed, medium-power switching applications. Features * Low Collector Saturation Voltage * High Speed Switching Absolute Maximum Ratings * Maximum Temperatures Storage Temperature....................................................................................................... -55 ~ +150 C Junction Temperature ................................................................................................. 150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ........................................................................................... 500 mW * Maximum Voltages and Currents (Ta=25C) VCBO Collector to Base Voltage..................................................................................................... 75 V VCEO Collector to Emitter Voltage ................................................................................................. 40 V VEBO Emitter to Base Voltage ......................................................................................................... 6 V IC Collector Current .................................................................................................................. 500 mA Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 *hFE6 fT Cob Min. 75 40 6 35 50 75 100 40 50 300 Typ. Max. 10 10 50 300 1 1.2 2 300 8 Unit V V V nA nA nA mv V V V Test Conditions IC=10uA, IE=0 IC=10mA, IB=0 IE=10uA, IC=0 VCB=60V, IE=0 VCB=60V, VEB(OFF)=3V VEB=3V, IC=0 IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=100uA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA VCE=1V, IC=150mA VCE=20V, IC=20mA, f =100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width 380us, Duty Cycle2% MHz pF HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 10000 Spec. No. :Preliminary Data Issued Date : 2000.10.01 Revised Date : 2000.10.01 Page No. : 2/3 Saturation Voltage & Collector Current VCE=10V VCE=1V 100 Saturation Voltage (mV) 1000 VBE(sat) @ IC=10IB hFE 100 VCE(sat) @ IC=10IB 10 0.1 1 10 100 1000 10 0.1 1 10 100 1000 Collector Current (mA) Collector Current (mA) Capacitance & Reverse-Biased Voltage 100 1000 Cutoff Frequency & Collector Current Cutoff Frequency (MHz) fT 100 Capacitance (pF) 10 Cob 10 1 0.1 1 10 100 1000 1 1 10 100 1000 Reverse Biased Voltage (V) Collector Current (mA) HSMC Product Specification |
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